欢迎来到太原理工大学电气与动力工程学院!

当前位置: 网站首页 >> 师资队伍 >> 硕士生导师 >> 正文
任宇
职称:副教授学历:博士研究生
学科:电气工程
研究领域或方向:1)宽禁带半导体器件建模、封装及其在电力装备及电动汽车中的应用; 2)直流开断技术及直流微网保护
邮箱:renyu@tyut.edu.cn
  • 主讲课程
  • 学术论文
  • 主持项目
    现代电力电子技术(研究生,英文授课)
    [1] Y. Ren, F. Zhang, et al. "Stability Analysis and Improvement for SSCB with Single-gate Controlled Series-connected SiC MOSFETs," IEEE Transactions on Industrial Electronics, pp. 1-1, 2020. (SCI检索,中科院JCR一区TOP, IF: 7.515)
    [2] Y. Ren, X. Yang, F. Zhang, et al. "A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs," IEEE Transactions on Power Electronics, vol. 34, no. 3, pp. 2002-2006, 2019.(SCI检索, 中科院JCR一区TOP, IF=6.373)
    [3] Y. Ren, X. Yang, F. Zhang, et al., "Voltage Suppression in Wire-Bond-Based Multichip Phase-Leg SiC MOSFET Module Using Adjacent Decoupling Concept," IEEE Transactions on Industrial Electronics, vol. 64, pp. 8235-8246, 2017. (SCI检索,中科院JCR一区TOP, IF: 7.515)
    [4] Y. Ren, X. Yang, F. Zhang, et al., "A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker," IEEE Transactions on Industrial Electronics, vol. 64, pp. 8299-8309, 2017. (SCI检索,中科院JCR一区TOP, IF: 7.515)
    [5] F. Zhang, Y. Ren, Z. Shi, X. Yang, and W. Chen, "Novel Hybrid DC Circuit Breaker Based on Series Connection of Thyristors and IGBT Half-Bridge Submodules," IEEE Transactions on Power Electronics, vol. 36, no. 2, pp. 1506-1518, 2021. (SCI检索, 中科院JCR一区TOP, IF=6.373)
    [6] F. Zhang, Y. Ren, X. Yang, W. Chen, and L. Wang, "A Novel Active Voltage Clamping Circuit Topology for Series-Connection of SiC-MOSFETs," IEEE Transactions on Power Electronics, pp. 1-1, 2020. (SCI检索, 中科院JCR一区TOP, IF=6.373)
    [7] F. Zhang, Y. Ren, X. Yang, W. Chen, and L. Wang, " A High Input Voltage Auxiliary Power Supply Utilizing Automatic Balanced MOSFET Stack," IEEE Transactions on Industrial Electronics, pp. 1-1, 2020. (SCI检索,中科院JCR一区TOP, IF: 7.515)
    [8] F. Zhang, X. Yang, Y. Ren, L. Feng, W. Chen, and Y. Pei, "A Hybrid Active Gate Drive for Switching Loss Reduction and Voltage Balancing of Series-Connected IGBTs," IEEE Transactions on Power Electronics, vol. 32, pp. 7469-7481, 2017. (SCI检索, 中科院JCR一区TOP, IF=6.373)
    [9] F. Zhang, X. Yang, Y. Ren, L. Feng, W. Chen, and Y. Pei, "Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs," IEEE Transactions on Power Electronics, vol. 33, no. 5, pp. 3802-3815, 2018. (SCI检索, 中科院JCR一区TOP, IF=6.373)
    [10] Y. Ren, Y. Xu, Z. Fan, et al."A novel Solid-state DC-breaker based on cascaded SiC MOSFETs" in Applied Power Electronics Conference and Exposition (APEC), 2017 IEEE, 2017.(EI收录)
    [11] Y. Ren, Y. Xu, Z. Fan, L. Long, T. Linlin, and Z. Xiangjun, "A low-inductance packaging layout for 1.2kV, 40A Full-SiC power module embedding split damping capacitors," in Future Energy Electronics Conference (IFEEC), 2015 IEEE 2nd International, 2015, pp. 1-5.(EI收录)
    [12] Y. Ren, Y. Xu, Z. Fan, T. Linlin, and Z. Xiangjun, "Analysis of A Low-Inductance Packaging Layout for Full-SiC Power Module Embedding Split Damping capacitors" in Applied Power Electronics Conference and Exposition (APEC), 2016 IEEE, 2016.(EI收录)
    [13] Y. Ren, Y. Xu, and Z. Fan, and C. Wenjie, "Analysis of series SiC MOSFETs stack using a single standard gate driver," in 2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), 2016, pp. 1664-1668.(EI收录)
    [14] Y. Ren, Y. Xu, and Z. Fan, et al., et al."A novel gate control strategy for 3.4kV cascade SiC MOSFETs stack," in 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), 2016, pp. 1-9.(EI收录)
    [15] Y. Ren, Y. Xu, and Z. Fan, et al."Experimental results of the multichip SiC MOSFET module embedding split damping capaciors " in The 2016 International Workshop on Wide-Bandgap Semiconductor Power Electronics Xi’an, China, in May 21-22, 2016.
    [16] F. Zhang, Y. Ren, and X. Yang, “Active Gate Charge Control Strategy for Series-Connected IGBTs,” Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, Jun. 2015, pp. 1840-1845.(EI收录)
    [17] Z. Fan, Y. Ren, T. Mofan, and Y. Xu, et al."A novel active gate drive for HV-IGBTs using feed-forward gate charge control strategy," in Energy Conversion Congress and Exposition (ECCE), 2015 IEEE, 2015, pp. 7009-7014. (EI收录)
    [18] Z. Fan, Y. Xu, Y. Ren, L. chen, and G. Ruifeng, "Voltage balancing optimization of series-connected IGBTs in solid-state breaker by using driving signal adjustment technique" in Future Energy Electronics Conference (IFEEC), 2015 IEEE 2nd International, 2015, pp. 1-5. (EI收录)
    [19] F. Zhang, X. Yang and Y. Ren, et al."Active gate charge control strategy for series-connected IGBTs," in 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016, pp. 2071-2075.(EI收录)
    [20] L. Qiao, X. Yang, Y. Ren, et al., "Performance of a 1.2kV, 288A full-SiC MOSFET module based on low inductance packaging layout," in 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017, pp. 3038-3042.(EI收录)
    [21] 任宇,韩亚强,谭琳琳,杨旭, 卓放,裴云庆,“一种用于IGBT串联的简单可靠高压隔离驱动电源”,中国电源学会第二十一届学术年会, 深圳,2015年11月
    [22] 张帆, 杨旭, 任宇, 陈颖,苟锐锋, "一种适用于固态直流断路器的IGBT串联均压电路," 中国电机工程学报, pp. 656-663, 2016. (EI收录)
    [1] 山西省回国留学人员科研资助项目:面向电力变换器的集成化碳化硅器件串联驱动研究 (2019.9-2021.9),经费5万,在研。
    [2] 山西省应用基础研究计划面上青年项目:面向直流配电网的碳化硅固态断路器拓扑结构稳定性分析及优化 (2019.9-2022.9),经费3万,在研。
    [3] 山西省高等学校科技创新项目:高开断速度全固态直流断路器拓扑结构及分断机理研究 (2019.9-2021.9),经费3万,在研。
    [4] 太原理工大学科研启动经费:宽禁带器件SiC MOSFET测试、模块封装、结构-功能集成 (2019.5-2022.5),经费12万,在研。

.

地址:山西省太原市迎泽西大街79号
邮编:030024 电话:0351-6010031
邮箱:tyut_dlxy@163.com